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NTHD4508N Power MOSFET
20 V, 4.1 A, Dual N-Channel ChipFETt
Features
* * * *
Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available
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V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V ID MAX 4.1 A
Applications
* DC-DC Buck/Boost Converters * Battery and Low Side Switching in Portable Equipment Such as MP3 * Level Shifting
Players, Cell Phones, DSCs and PDAs
D1, D2
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Steady State tv5s Power Dissipation Steady State tv5s Pulsed Drain Current TJ = 25 C TJ = 85 C TJ = 25 C TJ = 25 C TJ = 85 C TJ = 25 C IDM TJ, TSTG TL PD Symbol VDSS VGS ID Value 20 12 3.0 2.2 4.1 1.13 0.59 2.1 12 -55 to 150 260 A C C W ChipFET CASE 1206A STYLE 2 Unit V V A S1, S2 N-Channel MOSFET G 1 , G2
tp = 10 s
Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
PIN CONNECTIONS
D1 8 D1 7 1 S1 2 G1 3 S2 4 G2 1 2 3 4
MARKING DIAGRAM
8 7 6 5 C8 M
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Symbol RJA Max 110 Unit C/W
D2 6 D2 5
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
C8 = Specific Device Code M = Month Code
ORDERING INFORMATION
Device NTHD4508NT1 NTHD4508NT1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
October, 2004 - Rev. 3
Publication Order Number: NTHD4508N/D
NTHD4508N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = 16 V, TJ = 125C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On-Resistance VGS(TH) RDS(on) () VGS = VDS, ID = 250 mA VGS = 4.5, ID = 3.1 A VGS = 2.5, ID = 2.3 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = 1.5 A, dIS/dt = 100 A/ms VGS = 0 V, IS = 3.1 A 0.75 12.5 9.0 3.5 6.0 nC 1.15 V ns td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 16 V, ID = 3.1 A, RG = 2.5 W 5.0 15 10 3.0 10 30 20 6.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.1 A VGS = 0 V, f = 1.0 MHz, V 1 0 MH VDS = 10 V 180 80 25 2.6 0.5 0.6 0.7 4.0 nC pF gFS VDS = 10 V, ID = 3.1 A 0.6 60 80 6.0 1.2 75 115 S V mW IGSS VDS = 0 V, VGS = "12 V 20 1.0 10 "100 nA V mA Symbol Test Conditions Min Typ Max Units
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHD4508N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
8 ID, DRAIN CURRENT (AMPS) VGS = 5 V to 3 V VGS = 2.4 V 6 2.2 V 2V 8 TJ = 25C ID, DRAIN CURRENT (AMPS) 6 VDS 10 V
4
1.8 V
4
2
1.6 V 1.4 V
2
TC = -55C 25C 100C 3
0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0 0 0.5 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 ID = 3.1 A TJ = 25C 0.10 0.1
Figure 2. Transfer Characteristics
TJ = 25C VGS = 2.5 V
0.07 VGS = 4.5 V
0.05
0 0 3 5 2 4 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6
0.04 1 3 5 7 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 3.1 A VGS = 4.5 V 1.5 IDSS, LEAKAGE (nA) 100
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
1.3
TJ = 100C 10
1.1
0.9 0.7 -50 1 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTHD4508N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
400 CISS C, CAPACITANCE (pF) 300 CRSS 200 5 QG 4 7.5 3 5.0 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS = 0 V
VGS = 0 V
TJ = 25C
2
QGS
QGD
100
COSS
1 0 0 0.5 ID = 3.1 A TJ = 25C 1 1.5 2 2.5 QG, TOTAL GATE CHARGE (nC) 3
2.5
0 10
0
5
VGS
0
VDS
5
10
15
20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.3 A VGS = 4.5 V t, TIME (ns) 7 6 5 4 3 2 1
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
10
td(off) tr td(on) tf
1 1 10 RG, GATE RESISTANCE (OHMS) 100
0 0.3
0.45
0.6
0.75
0.9
1.05
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTHD4508N
SOLDERING FOOTPRINTS*
2.032 0.08 0.457 0.018 0.635 0.025 0.635 0.025 2.032 0.08
1.032 0.043
0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 0.66 0.026 0.254 0.010
SCALE 20:1 mm inches
Figure 11. Basic
Figure 12. Style 2
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS The basic pad layout with dimensions is shown in Figure 11. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. The minimum recommended pad pattern shown in Figure 12 improves the thermal area of the drain connections (pins 5, 6, 7, 8) while remaining within the confines of the basic footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq. mm). This will assist the power dissipation path away from the device (through the copper lead-frame) and into the board and exterior chassis (if applicable) for the single device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further.
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NTHD4508N
PACKAGE DIMENSIONS
ChipFET CASE 1206A-03 ISSUE E
A
8 7 6 5
M K
5 6 3 7 2 8 1
S
1 2 3 4
B
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 2.00 1.80 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080
L G
D
J
STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1
C 0.05 (0.002)
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NTHD4508N/D

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